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FX401 PDF预览

FX401

更新时间: 2024-11-21 22:32:15
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
4页 154K
描述
DC-DC Converter

FX401 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F5
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:25 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):65JESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:1.5 W
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):320 MHzVCEsat-Max:0.6 V
Base Number Matches:1

FX401 数据手册

 浏览型号FX401的Datasheet PDF文件第2页浏览型号FX401的Datasheet PDF文件第3页浏览型号FX401的Datasheet PDF文件第4页 
Ordering number:EN5028  
FX401  
TR:PNP Epitaxial Planar Silicon Transistor  
SBD:Schottky Barrier Diode  
DC-DC Converter  
Features  
Package Dimensions  
unit:mm  
· Complex type of a low saturation voltage, high speed  
switching and large current PNP transistor and a fast  
recovery and low forward voltage Shottky barrier  
diode facilitating high-density mounting,  
· The FX401 is composed on 2chips, one being  
equivalent to the 2SB1121 and the other the SB30-  
03P, placed in one package.  
2123  
[FX401]  
1:Base  
2:Emitter  
3:No Contact  
4:Anode  
Electrical Connection  
1:Base  
5:Common  
2:Emitter  
3:No Contact  
4:Anode  
5, 6:Common  
(Collector, Cathode)  
(Collector, Cathode)  
6:Common  
(Collector, Cathode)  
SANYO:XP5  
(Bottom view)  
(Top view)  
Switching Time Test CIrcuit  
Trr Test Circuit  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[TR]  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
–30  
–25  
–6  
V
V
CBO  
V
CEO  
V
V
EBO  
I
–2  
A
C
Collector Current (Pulse)  
Base Current  
I
–5  
A
CP  
I
–400  
1.5  
mA  
W
˚C  
B
Collector Dissipation  
P
C
Mounted on ceramic board (750mm2×0.8mm)  
Junction Temperature  
[SBD]  
Tj  
150  
Repetitive Peak Reverse Voltage  
Non-repetitive Peak Reverse Surge Voltage  
Average Rectified Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
V
30  
35  
3
V
V
RRM  
V
RSM  
I
A
O
I
50Hz sine wave, 1cycle  
10  
A
FSM  
Tj  
–55 to +125  
–55 to +125  
˚C  
˚C  
Tstg  
Continued on next page.  
· Marking:401  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/41095TS (KOTO) TA-0087 No.5028-1/4  

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