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FX3ASJ-3 PDF预览

FX3ASJ-3

更新时间: 2024-11-21 22:12:47
品牌 Logo 应用领域
POWEREX 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
4页 53K
描述
Pch POWER MOSFET HIGH-SPEED SWITCHING USE

FX3ASJ-3 数据手册

 浏览型号FX3ASJ-3的Datasheet PDF文件第2页浏览型号FX3ASJ-3的Datasheet PDF文件第3页浏览型号FX3ASJ-3的Datasheet PDF文件第4页 
MITSUBISHI Pch POWER MOSFET  
FX3ASJ-3  
HIGH-SPEED SWITCHING USE  
FX3ASJ-3  
OUTLINE DRAWING  
Dimensions in mm  
6.5  
0.5 ± 0.1  
5.0 ± 0.2  
4
1.0  
A
0.9 max  
0.5 ± 0.2  
2.3 2.3  
0.8  
1
2
3
3
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
4V DRIVE  
1
VDSS ............................................................. –150V  
rDS (ON) (MAX) .................................................. 1.2  
2
4
ID ...................................................................... –3A  
Integrated Fast Recovery Diode (TYP.) ...........80ns  
MP-3  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
–150  
±20  
Unit  
V
VGS = 0V  
VDS = 0V  
V
–3  
A
IDM  
IDA  
Drain current (Pulsed)  
–12  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
–3  
A
IS  
–3  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
–12  
A
PD  
30  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
0.26  
Tstg  
Storage temperature  
Weight  
Typical value  
Jan.1999  

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