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FX3ASJ-3 PDF预览

FX3ASJ-3

更新时间: 2024-11-21 22:12:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
4页 48K
描述
HIGH-SPEED SWITCHING USE

FX3ASJ-3 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.31Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:1.32 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX3ASJ-3 数据手册

 浏览型号FX3ASJ-3的Datasheet PDF文件第2页浏览型号FX3ASJ-3的Datasheet PDF文件第3页浏览型号FX3ASJ-3的Datasheet PDF文件第4页 
MITSUBISHI Pch POWER MOSFET  
FX3ASJ-3  
HIGH-SPEED SWITCHING USE  
FX3ASJ-3  
OUTLINE DRAWING  
Dimensions in mm  
6.5  
0.5 ± 0.1  
5.0 ± 0.2  
4
1.0  
A
0.9 max  
0.5 ± 0.2  
2.3 2.3  
0.8  
1
2
3
3
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
4V DRIVE  
1
VDSS ............................................................. –150V  
rDS (ON) (MAX) .................................................. 1.2  
2
4
ID ...................................................................... –3A  
Integrated Fast Recovery Diode (TYP.) ...........80ns  
MP-3  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
–150  
±20  
Unit  
V
VGS = 0V  
VDS = 0V  
V
–3  
A
IDM  
IDA  
Drain current (Pulsed)  
–12  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
–3  
A
IS  
–3  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
–12  
A
PD  
30  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
0.26  
Tstg  
Storage temperature  
Weight  
Typical value  
Jan.1999  

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