Datasheet > FTK640F

FTK640F

更新时间： 2022-06-24 15:41:06

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	433K
描述
18A, 200V, 0.155Î© , N-CHANNEL POWER MOS FET

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数据手册

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FTK640F 数据手册

FTK640D/DD/P/F

1.25

1.15

1.05

0.95

0.85

0.75

3000

= 0V, f = 1MHz

= 250µA

= C

+ C

ISS

= C

RSS

OSS

≈C

+ C

2400

1800

1200

600

ISS

OSS

RSS

, DRAIN TO SOURCE VOLTAGE (V)

-60 -40 -20

20 40 60 80 100 120 140 160

100

T , JUNCTION TEMPERATURE ( C)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1000

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

150 C

25 C

100

150 C

25 C

0.4

0.8

1.2

1.6

2.0

, DRAIN CURRENT (A)

, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

= 28A

= 40V

= 100V

= 160V

Q , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2014. 3. 10

Revision No : 0

5/7

1 2 3 456 7

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