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FTD7010

更新时间： 2024-01-19 18:30:45
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲光电二极管通用开关
页数 文件大小 规格书
4页 281K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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中文翻译

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FTD7010 技术参数

生命周期：Transferred零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.38配置：SEPARATE, 2 ELEMENTS
最小漏源击穿电压：12 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.023 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.2 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FTD7010 数据手册

 浏览型号FTD7010的Datasheet PDF文件第2页浏览型号FTD7010的Datasheet PDF文件第3页浏览型号FTD7010的Datasheet PDF文件第4页 
Ordering number : ENA1324  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
FTD7010  
Features  
•
1.8V drive.  
•
Mount heigt 1.1mm.  
•
Coposite type, facilitating high-density mounting.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--12  
±10  
-- 6  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW 10 s, duty cycle 1%  
When mounted on ceramic substrate (1000mm2 0.8mm) 1unit  
When mounted on ceramic substrate (1000mm2 0.8mm)  
--30  
1.1  
A
≤
μ
≤
DP  
P
P
W
W
°C  
°C  
×
D
T
1.2  
×
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--12  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
V
I
=-- 1mA, V =0V  
D GS  
V
μA  
μA  
μA  
V
(BR)DSS  
V
V
V
V
V
=-- 8V, V =0V  
GS  
-- 1  
--10  
±10  
--1.3  
DS  
DS  
GS  
DS  
DS  
I
I
DSS  
=-- 12V, V =0V  
GS  
Gate-to-Source Leakage Current  
Cutoff Voltage  
=±8V, V =0V  
DS  
GSS  
V
(off)  
GS  
=-- 6V, I =-- 1mA  
--0.4  
7.2  
D
Forward Transfer Admittance  
| yfs |  
=-- 6V, I =-- 3A  
12  
S
D
Marking : D7010  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1324-1/4  
92408PA TI IM TC-00001560  
1234

中文翻译

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