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FT29F040B-90FF PDF预览

FT29F040B-90FF

更新时间: 2024-02-08 02:38:53
品牌 Logo 应用领域
福思力 - FORCE /
页数 文件大小 规格书
36页 3898K
描述
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

FT29F040B-90FF 数据手册

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FT29F040B  
4 Megabit (512 K x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10% for read and write operations  
Minimises system level power requirements  
Embedded Algorithms  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.32 µm process technology  
— Compatible with 0.5 µm FT29F040 device  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
High performance  
— Access times as fast as 55 ns  
Minimum 1,000,000 program/erase cycles per  
sector guaranteed  
Low power consumption  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package options  
— 20 mA typical active read current  
— 30 mA typical program/erase current  
— 1 µA typical standby current (standard access  
time to active mode)  
— 32-pin PLCC, TSOP, or PDIP  
Flexible sector architecture  
— 8 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased  
— Supports full chip erase  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply Flash standard  
— Superior inadvertent write protection  
— Sector protection:  
Data# Polling and toggle bits  
A hardware method of locking sectors to prevent  
any program or erase operations within that sector  
— Provides a software method of detecting  
program or erase cycle completion  
Erase Suspend/Erase Resume  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
Rev 2  
Page 1 of 36  

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