Datasheet > FSS102

FSS102

更新时间： 2024-11-22 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
4页	93K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 5A I(D) \| SO

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中文翻译

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数据手册

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FSS102 数据手册

Ordering number:ENN5986A

P-Channel Silicon MOSFET

FSS102

DC/DC Converter Applications

Features

Package Dimensions

unit:mm

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

2116

[FSS102]

1 : Source

2 : Source

3 : Source

4 : Gate

0.2

5.0

5 : Drain

6 : Drain

7 : Drain

8 : Drain

1.27

0.595

0.43

Specifications

SANYO : SOP8

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

–30

±20

–5

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm²×0.8mm)

–32

1.8

Tch

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

–30

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=–1mA, V =0

D GS

µA

(BR)DSS

=–30V, V =0

–10

DSS

=±16V, V =0

±10

GSS

=–10V, I =–1mA

–1.0

–2.5

GS(off)

| yfs |

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

=–10V, I =–5A

=–5A, V =–10V

mΩ

DS(on)

=–2A, V =–4V

D GS

120

DS(on)

Ciss

Input Capacitance

=–10V, f=1MHz

820

470

230

Output Capacitance

Reverse Transfer Capacitance

Marking : S102

Coss

Crss

=–10V, f=1MHz

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31000TS (KOTO) TA-2408 No.5986-1/4

12 3 4

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