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FS5KMJ-2 PDF预览

FS5KMJ-2

更新时间: 2024-11-15 21:15:07
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 42K
描述
Power Field-Effect Transistor, 5A I(D), 100V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN

FS5KMJ-2 技术参数

生命周期:Obsolete零件包装代码:TO-220FN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.46 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):15 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FS5KMJ-2 数据手册

 浏览型号FS5KMJ-2的Datasheet PDF文件第2页浏览型号FS5KMJ-2的Datasheet PDF文件第3页浏览型号FS5KMJ-2的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS5KMJ-2  
HIGH-SPEED SWITCHING USE  
FS5KMJ-2  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
f 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1 2 3  
w
¡4V DRIVE  
¡VDSS ............................................................................... 100V  
¡rDS (ON) (MAX) ................................................................0.4  
¡ID ........................................................................................... 5A  
¡Integrated Fast Recovery Diode (TYP.) ............ 80ns  
¡Viso ............................................................................... 2000V  
q GATE  
w DRAIN  
e SOURCE  
q
e
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
100  
±20  
V
5
A
IDM  
IDA  
Drain current (Pulsed)  
20  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
5
A
IS  
5
20  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
A
PD  
15  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
–55 ~ +150  
–55 ~ +150  
2000  
Storage temperature  
Isolation voltage  
Weight  
AC for 1minute, Terminal to case  
Typical value  
2.0  
g
Feb.1999  

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