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FS5ASH-2 PDF预览

FS5ASH-2

更新时间: 2024-11-14 21:20:51
品牌 Logo 应用领域
POWEREX 开关脉冲晶体管
页数 文件大小 规格书
4页 53K
描述
Power Field-Effect Transistor, 5A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN

FS5ASH-2 数据手册

 浏览型号FS5ASH-2的Datasheet PDF文件第2页浏览型号FS5ASH-2的Datasheet PDF文件第3页浏览型号FS5ASH-2的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS30KMH-2  
HIGH-SPEED SWITCHING USE  
FS30KMH-2  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
f 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1 2 3  
w
¡2.5V DRIVE  
q GATE  
w DRAIN  
e SOURCE  
¡VDSS ................................................................................100V  
¡rDS (ON) (MAX) .............................................................. 93m  
¡ID ......................................................................................... 30A  
¡Integrated Fast Recovery Diode (TYP.) ............. 95ns  
¡Viso ................................................................................ 2000V  
q
e
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
100  
Unit  
V
VGS = 0V  
VDS = 0V  
±10  
V
30  
A
IDM  
IDA  
Drain current (Pulsed)  
120  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
30  
A
IS  
30  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
120  
A
PD  
25  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
–55 ~ +150  
–55 ~ +150  
2000  
2.0  
Storage temperature  
Isolation voltage  
Weight  
AC for 1minute, Terminal to case  
Typical value  
g
Feb.1999  

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