5秒后页面跳转
FS50VSJ-2-T11 PDF预览

FS50VSJ-2-T11

更新时间: 2024-11-14 07:00:11
品牌 Logo 应用领域
瑞萨 - RENESAS 开关
页数 文件大小 规格书
7页 172K
描述
High-Speed Switching Use Nch Power MOS FET

FS50VSJ-2-T11 技术参数

生命周期:Not Recommended零件包装代码:TO-220S
包装说明:SC-83, TO-220S, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.32外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.052 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FS50VSJ-2-T11 数据手册

 浏览型号FS50VSJ-2-T11的Datasheet PDF文件第2页浏览型号FS50VSJ-2-T11的Datasheet PDF文件第3页浏览型号FS50VSJ-2-T11的Datasheet PDF文件第4页浏览型号FS50VSJ-2-T11的Datasheet PDF文件第5页浏览型号FS50VSJ-2-T11的Datasheet PDF文件第6页浏览型号FS50VSJ-2-T11的Datasheet PDF文件第7页 
FS50VSJ-2  
High-Speed Switching Use  
Nch Power MOS FET  
REJ03G1426-0200  
(Previous: MEJ02G0069-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : 100 V  
DS(ON) (max) : 48 mΩ  
V
r
ID : 50 A  
Integrated Fast Recovery Diode (TYP.) : 90 ns  
Outline  
RENESAS Package code: PRSS0004AB-A  
(Package name: TO-220S)  
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
3
Applications  
Motor control, Lamp contrC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
Conditions  
VGS = 0 V  
100  
V
V
±20  
VDS = 0 V  
50  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
200  
A
IDA  
50  
A
L = 50 µH  
IS  
50  
200  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
A
PD  
70  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
1.2  
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

与FS50VSJ-2-T11相关器件

型号 品牌 获取价格 描述 数据表
FS50VSJ3 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 50A I(D) | TO-263AB
FS50VSJ-3 POWEREX

获取价格

Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS50VSJ-3 MITSUBISHI

获取价格

HIGH-SPEED SWITCHING USE
FS50VSJ-3 RENESAS

获取价格

MITSUBISHI Nch POWER MOSFET
FS50VSJ-3-T2 MITSUBISHI

获取价格

Power Field-Effect Transistor, 50A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FS511 FORTUNE

获取价格

18-bit ADC with 1 low noise OPAMP
FS511-GHB FORTUNE

获取价格

18-bit ADC with 1 low noise OPAMP
FS511-PHB FORTUNE

获取价格

18-bit ADC with 1 low noise OPAMP
FS511-PI FORTUNE

获取价格

18-bit ADC with 1 low noise OPAMP
FS512 LITTELFUSE

获取价格

工作原理 Upon application of input voltage, the o