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FS14VS-10 PDF预览

FS14VS-10

更新时间: 2024-01-21 04:33:01
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
4页 45K
描述
HIGH-SPEED SWITCHING USE

FS14VS-10 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.33
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.64 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS14VS-10 数据手册

 浏览型号FS14VS-10的Datasheet PDF文件第2页浏览型号FS14VS-10的Datasheet PDF文件第3页浏览型号FS14VS-10的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS14VS-10  
HIGH-SPEED SWITCHING USE  
FS14VS-10  
OUTLINE DRAWING  
Dimensions in mm  
r
10.5MAX.  
4.5  
1.3  
+0.3  
–0  
0
1
5
0.5  
0.8  
q
w e  
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS ................................................................................ 500V  
¡rDS (ON) (MAX) .............................................................. 0.64  
¡ID ..........................................................................................14A  
e
TO-220S  
APPLICATION  
SMPS, DC-DC Converter, battery charger, power  
supply of printer, copier, HDD, FDD, TV, VCR, per-  
sonal computer etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
VGS = 0V  
VDS = 0V  
500  
±30  
V
V
14  
A
IDM  
Drain current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
42  
A
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
1.2  
Tstg  
Typical value  
Feb.1999  

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