生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.33 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 14 A |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.64 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 42 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FS14VS-10A-T11 | RENESAS | 14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 |
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FS14VS-10-T1 | MITSUBISHI | Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Met |
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FS14VS-10-T2 | MITSUBISHI | Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Met |
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FS14VS9 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 14A I(D) | TO-263AB |
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FS14VS-9 | POWEREX | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FS14VS-9 | MITSUBISHI | HIGH-SPEED SWITCHING USE |
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