生命周期: | Not Recommended | 包装说明: | LDPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.34 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.64 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 42 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS14VS-10-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Met | |
FS14VS-10-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Met | |
FS14VS9 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 14A I(D) | TO-263AB | |
FS14VS-9 | POWEREX |
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Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FS14VS-9 | MITSUBISHI |
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HIGH-SPEED SWITCHING USE | |
FS14VS-9 | RENESAS |
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MITSUBISHI Nch POWER MOSFET | |
FS14VS-9A-T11 | RENESAS |
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14A, 450V, 0.52ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | |
FS14VS-9-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 450V, 0.52ohm, 1-Element, N-Channel, Silicon, Met | |
FS1501-7EPB2 | BEL |
获取价格 |
DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, METAL, CASE S02, MODULE | |
FS1501-7EPD0B1 | BEL |
获取价格 |
DC-DC Regulated Power Supply Module, 1 Output, Hybrid, METAL, CASE S02, MODULE |