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FS10KM-9A PDF预览

FS10KM-9A

更新时间: 2024-01-17 11:26:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 67K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220FN

FS10KM-9A 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.38
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.73 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS10KM-9A 数据手册

 浏览型号FS10KM-9A的Datasheet PDF文件第2页浏览型号FS10KM-9A的Datasheet PDF文件第3页浏览型号FS10KM-9A的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS10KM-9A  
HIGH-SPEED SWITCHING USE  
FS10KM-9A  
OUTLINE DRAWING  
Dimensions in mm  
10 0.3  
2.8 0.2  
φ 3.2 0.2  
1.1 0.2  
1.1 0.2  
0.75 0.15  
2.54 0.25  
0.75 0.15  
2.54 0.25  
➀ ➁ ➂  
GATE  
DRAIN  
SOURCE  
10V DRIVE  
VDSS ............................................................................... 450V  
rDS (ON) (MAX) ..............................................................0.73  
ID ......................................................................................... 10A  
TO-220FN  
APPLICATION  
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
450  
30  
V
10  
30  
A
IDM  
Drain current (Pulsed)  
Avalanche current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
A
IDA  
L = 200µH  
10  
A
PD  
35  
W
°C  
°C  
V
Tch  
–55 ~ +150  
–55 ~ +150  
2000  
Tstg  
Viso  
AC for 1minute, Terminal to case  
Typical value  
Weight  
2.0  
g
Sep. 2001  

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