生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, X-XUUC-N | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 23 A | 最大漏源导通电阻: | 0.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | X-XUUC-N |
JESD-609代码: | e0 | 元件数量: | 1 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FRC150H | MICROSEMI | Power Field-Effect Transistor, 40A I(D), 100V, 0.83ohm, 1-Element, N-Channel, Silicon, Met |
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FRC150K | MICROSEMI | Power Field-Effect Transistor, 40A I(D), 100V, 0.83ohm, 1-Element, N-Channel, Silicon, Met |
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FRC160H | MICROSEMI | Power Field-Effect Transistor, 50A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met |
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FRC160K | MICROSEMI | Power Field-Effect Transistor, 50A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met |
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FRC1BA-1ANS-DC12V | ETC | RELAY |
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FRC1BA-1ARS-DC12V | ETC | RELAY |
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