Datasheet > FR607-T3-LF

FR607-T3-LF

更新时间： 2024-11-15 19:29:07

品牌	Logo	应用领域
WTE		快速恢复二极管
页数	文件大小	规格书
4页	59K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN

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数据手册

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FR607-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

FR601 – FR607

6.0A FAST RECOVERY DIODE

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: R-6, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 2.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

R-6

Min

25.4

8.60

1.20

8.60

Dim

Max

—

9.10

1.30

9.10

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

FR601 FR602 FR603 FR604 FR605 FR606 FR607 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

6.0

Average Rectified Output Current

(Note 1)

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

200

1.2

Forward Voltage

@I_F= 6.0A

V^FM

I^RM

Peak Reverse Current

@T_A= 25°C

200

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

150

250

500

°C

100

T^j

-65 to +125

-65 to +150

Storage Temperature Range

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

FR601 – FR607

1 of 4

12 3 4

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