FR603GP-BP

更新时间： 2024-02-12 06:20:07

品牌	Logo	应用领域
美微科 - MCC		整流二极管
页数	文件大小	规格书
3页	81K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN

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技术参数
数据手册

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FR603GP-BP 技术参数

Case Style：	DO-27	IVA(A)：	6.0
VRRM (V)：	200	IFSM (A)：	300
VF (V)：	1.3	@IVA(A)：	6.0
Maximum reverse current：	10.0	TRR(nS)：	150
class：	Diodes

FR603GP-BP 数据手册

FR601

THRU

M C C

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FR607

Features

6 Amp Fast Recovery

Rectifier

Low Cost

Low Leakage

Low Forward Voltage Drop

High Current Capability

50 to 1000 Volts

Fast Switching Speed For High Efficiency

R-6

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

FR601

FR602

FR603

FR604

FR605

FR606

FR607

---

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

Cathode

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

6 A

T_A= 55°C

Peak Forward Surge

Current

I_FSM

300A

8.3ms, half sine

Maximum

I_FM= 6.0A;

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

FR601-604

FR605

FR606-607

Typical Junction

Capacitance

V_F

I_R

1.3V

T_A= 25°C

10mA

150mA T_A= 55°C

T_A= 25°C

DIMENSIONS

INCHES

MIN

.340

.048

MIN

DIM

MAX

.360

.052

---

MAX

9.10

1.30

---

NOTE

8.60

1.20

1.000

25.40

T_rr

C_J

150ns I_F=0.5A, I_R=1.0A,

250ns I_rr=0.25A

500ns

150pF Measured at

1.0MHz, V_R=4.0V

*Pulse Test: Pulse Width 300msec, Duty Cycle 1%

www.mccsemi.com

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