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FR201GT-G PDF预览

FR201GT-G

更新时间: 2024-11-21 07:18:03
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 84K
描述
Fast Recovery Rectifiers

FR201GT-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76其他特性:HIGH RELIABILITY
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:50 V
最大反向电流:5 µA最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

FR201GT-G 数据手册

 浏览型号FR201GT-G的Datasheet PDF文件第2页浏览型号FR201GT-G的Datasheet PDF文件第3页浏览型号FR201GT-G的Datasheet PDF文件第4页 
Fast Recovery Rectifiers  
FR201G-G Thru. FR207G-G  
Voltage: 50 to 1000 V  
Current: 2.0 A  
RoHS Device  
DO-15  
Features  
-Glass passivated chip.  
-Low forward voltage.  
-High reliability.  
1.000(25.40) Min.  
-High surge current capability.  
-High current capability.  
0.300(7.63)  
0.230(5.85)  
Mechanical data  
0.142(3.61) DIA.  
0.102(2.60) DIA.  
-Case: JEDEC DO-15 molded plastic.  
-Epoxy: UL 94V-0 rate flame retardant.  
-Polarity: Color band denotes cathode end.  
-Lead: Solderable per MIL-STD-202,  
method 208 guaranteed.  
1.000(25.40) Min.  
0.033(0.84) DIA.  
0.028(0.71) DIA.  
-Mounting position: Any  
Dimensions in inches and (millimeter)  
-Weight: 0.402 grams  
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)  
FR  
FR  
FR  
FR  
FR  
FR  
FR  
Symbol  
Parameter  
Unit  
201G-G 202G-G 203G-G 204G-G 205G-G 206G-G 207G-G  
Maximum repetitive peak  
reverse voltage  
VB  
50  
100  
200  
400  
600  
800  
1000  
V
@IT = 5μA  
Maximum RMS voltage  
VR  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
VDC  
100  
1000  
Maximum average forward  
rectified current  
IF  
2.0  
A
V
@TA=25°C  
Maximum instantaneous forward  
voltage at specified current  
VF  
1.3  
5.0  
μA  
ns  
°C  
°C  
Maximum DC reverse current  
Maximum reverse recovery time (Note 1)  
Operating temperature range  
Storage temperature range  
IR  
trr  
150  
250  
500  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
NOTES:  
1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A(RGI circuit)  
REV:A  
Page 1  
QW-BF010  
Comchip Technology CO., LTD.  

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