Datasheet > FR153(G)

FR153(G)

更新时间： 2024-11-23 20:46:51

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技术参数
数据手册

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FR153(G) 技术参数

Case Style：	DO-15	IVA(A)：	1.5
VRRM (V)：	200	IFSM (A)：	60
VF (V)：	1.3	@IVA(A)：	1.5
Maximum reverse current：	5.0	TRR(nS)：	150
class：	Diodes

FR153(G) 数据手册

FR151G-FR157G

1.5AMP. Glass Passivated Fast Recovery Rectifiers

DO-15

Features

ꢀ

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

Low power loss

Mechanical Data

ꢀ

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Polarity: Color band denotes cathode end

High temperature soldering guaranteed:

Dimensions in inches and (millimeters)

260 C /10 seconds/.375”,(9.5mm) lead

lengths at 5 lbs.,(2.3kg) tension

Weight: 0.40 gram

ꢀ

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

151G 152G 153G 154G 155G 156G

50 100 200 400 600 800 1000

Symbol

Type Number

Units

157G

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

35 70 140 280 420 560 700

50 100 200 400 600 800 1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375”(9.5mm) Lead Length

I_(AV)

1.5

@T_A= 55 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.5A

V_F

I_R

1.3

5.0

Maximum DC Reverse Current @ T_A=25 C

at Rated DC Blocking Voltage @ T_A=125 C

100

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance

Trr

150

250

500

-65 to +150

C/W

θJA

Operating Temperature Range

T_J

Storage Temperature Range

T_STG

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.

3. Mount on Cu-Pad Size 10mm x 10mm on P.C.B.

Notes:

http://www.lgesemi.com

Revision:20170301-P1

mail:lge@lgesemi.com

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