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FODM8801BR2V PDF预览

FODM8801BR2V

更新时间: 2023-09-03 20:32:46
品牌 Logo 应用领域
安森美 - ONSEMI 局域网输出元件晶体管光电晶体管
页数 文件大小 规格书
11页 201K
描述
OptoHiT™ 系列,高温光电晶体管

FODM8801BR2V 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:LEAD FREE, MINIFLAT-4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
Factory Lead Time:10 weeks风险等级:1.71
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:75 V
配置:SINGLE当前传输比率-最小值:65%
标称电流传输比:215%最大暗电源:100 nA
最大正向电流:0.02 A最大正向电压:1.8 V
最大绝缘电压:3750 V安装特点:SURFACE MOUNT
元件数量:1最大通态电流:0.03 A
最高工作温度:125 °C最低工作温度:-40 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.15 W
最长响应时间:0.00002 s子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

FODM8801BR2V 数据手册

 浏览型号FODM8801BR2V的Datasheet PDF文件第2页浏览型号FODM8801BR2V的Datasheet PDF文件第3页浏览型号FODM8801BR2V的Datasheet PDF文件第4页浏览型号FODM8801BR2V的Datasheet PDF文件第5页浏览型号FODM8801BR2V的Datasheet PDF文件第6页浏览型号FODM8801BR2V的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
HALFPITCH MINIFLAT  
OptoHiTE Series,  
Phototransistor  
High-Temperature  
Optocoupler in Half-Pitch  
Mini-Flat 4-Pin Package  
MFP4 2.5 x 4.4, 1.27P  
CASE 100AL  
MARKING DIAGRAM  
FODM8801A, FODM8801B,  
FODM8801C  
ON  
8801x  
VXYYM  
Description  
In the OptoHiT series, the FODM8801 is a firstofkind  
phototransistor, utilizing onsemi’s leadingedge proprietary process  
technology to achieve high operating temperature characteristics, up  
to 125°C. The optocoupler consists of an aluminum gallium arsenide  
(AlGaAs) infrared lightemitting diode (LED) optically coupled to a  
phototransistor, available in a compact halfpitch, miniflat, 4pin  
package. It delivers high current transfer ratio at very low input  
8801x = Specific Device Code (x = A, B, C)  
V
= DIN EN/IEC6074755 Option (only  
appears on component ordered with  
this option)  
X
= OneDigit Year Code  
YY  
M
= Digit Work Week  
= Assembly Package Code  
current. The inputoutput isolation voltage, V , is rated at 3750  
ISO  
VAC  
.
RMS  
PIN CONNECTIONS  
Features  
Utilizing Proprietary Process Technology to Achieve High Operating  
1
4
COLLECTOR  
ANODE  
Temperature: Up to 125°C  
Guaranteed Current Transfer Ratio (CTR)  
Specifications Across Full Temperature Range  
Excellent CTR Linearity at HighTemperature  
CATHODE 2  
3 EMITTER  
CTR at Very Low Input Current, I  
F
High Isolation Voltage Regulated by Safety Agency:  
CUL / UL1577, 3750 VAC  
DIN EN/IEC6074755  
for 1 Minute and  
RMS  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 9 of  
this data sheet.  
Compact HalfPitch, MiniFlat, 4Pin Package  
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height)  
>5 mm Creepage and Clearance Distance  
Applicable to Infrared Ray Reflow, 245°C  
These are PbFree Devices  
Applications  
Primarily Suited for DCDC Converters  
GroundLoop Isolation, SignalNoise Isolation  
Communications – Adapters, Chargers  
Consumer – Appliances, SetTop Boxes  
Industrial – Power Supplies, Motor Control, Programmable Logic  
Control  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
December, 2022 Rev. 7  
FODM8801A/D  

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