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FODM291AR2V PDF预览

FODM291AR2V

更新时间: 2024-11-15 11:10:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 502K
描述
6-Pin DIP Package Phototransistor Output Optocoupler

FODM291AR2V 数据手册

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DATA SHEET  
www.onsemi.com  
Single Channel, DC  
Sensing Input,  
Phototransistor  
Optocoupler In Half-Pitch  
Mini-Flat 4-Pin Package  
MFP4 2.7x4.4, 1.27P  
CASE 100EB  
FODM291 Series  
MARKING DIAGRAM  
The FODM291 series consist of a gallium arsenide infrared emitting  
diode driving a phototransistor. It built in a compact, halfpitch,  
miniflat, 4pin package. The lead pitch is 1.27 mm.  
291x  
Features  
Current Transfer Ratio Ranges from 80 to 600%  
at I = 5 mA, V = 5 V, T = 25°C  
F
CE  
A
FODM291A 80 to 160%  
FODM291B 130 to 260%  
FODM291C 200 to 400%  
FODM291D 300 to 600%  
Safety and Regulatory Approvals:  
1.  
2.  
3.  
4.  
5.  
6.  
ON = Corporate Logo  
291x = Device Number  
V
X
YY  
R1  
= DIN EN/IEC6074755 Option  
= OneDigit Year Code  
= Digit Work Week  
UL1577, 3750 VAC  
for 1 min  
RMS  
= Assembly Package Code  
DIN EN/IEC6074755, 565 V Peak Working Insulation Voltage  
(Pending)  
Applicable to Infrared Ray Reflow, 260°C  
PIN CONNECTIONS  
Typical Applications  
Primarily Suited for DCDC Converters  
For Ground Loop Isolation, Signal to Noise Isolation  
Communications – Adapters, Chargers  
Consumer – Appliances, Set Top Boxes  
Industrial – Power Supplies, Motor Control, Programmable Logic  
Control  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
September, 2022 Rev. 0  
FODM291/D  

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