Datasheet > FOD3125SDV

FOD3125SDV

更新时间： 2024-11-24 02:50:07

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
18页	301K
描述
High Temperature, 2.5 A Output Current, Gate Drive Optocoupler

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FOD3125SDV 数据手册

High Temperature, 2.5 A

Output Current, Gate Drive

Optocoupler

FOD3125

Description

The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler,

capable of driving most medium IGBTs or MOSFETs across extended

industrial temperature range, −40°C to 125°C. It is ideally suited for

fast switching driving of power IGBTs and MOSFETs used in motor

control inverter applications, and high performance power system.

It utilizes ON Semiconductor patented coplanar packaging

www.onsemi.com

technology, Optoplanar , and optimized IC design to achieve high

noise immunity, characterized by high common mode rejection.

It consists of a gallium aluminum arsenide (AlGaAs) light emitting

diode optically coupled to an integrated circuit with a high−speed

driver for push−pull MOSFET output stage.

PDIP8 GW

CASE 709AD

PDIP8 GW

CASE 709AC

Features

• Extended Industrial Temperate Range, −40°C to 125°C

• High Noise Immunity characterized by 35 kV/ms minimum Common

Mode Rejection

PDIP8 6.6x3.81, 2.54P PDIP8 9.655x6.6, 2.54P

CASE 646BW CASE 646CQ

• 2.5 A Peak Output Current Driving Capability for Most 1200 V/

20 A IGBT

• Use of P−channel MOSFETs at Output Stage Enables Output Voltage

Swing close to the Supply Rail

FUNCTIONAL BLOCK DIAGRAM

• Wide Supply Voltage Range from 15 V to 30 V

• Fast Switching Speed

ANODE

CATHODE

♦ 400 ns maximum Propagation Delay

♦ 100 ns maximum Pulse Width Distortion

• Under Voltage LockOut (UVLO) with Hysteresis

• Safety and Regulatory Approvals

♦ UL1577, 5000 V

for 1 minute

RMS

♦ DIN EN/IEC60747−5−5 (pending approval)

• >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)

• 1,414 V Peak Working Insulation Voltage (VIORM)

• This is a Pb−Free Device

Applications

Note: A 0.1 mF bypass capacitor must be

• Industrial Inverter

connected between pins 5 and 8.

• Uninterruptible Power Supply

• Induction Heating

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 13 of this data sheet.

• Isolated IGBT/Power MOSFET Gate Drive

Table 1. TRUTH TABLE

LED

Off

– V “Positive Going” (Turn−on)

– V “Negative Going” (Turn−off)

0 V to 30 V

0 V to 11 V

11 V to 14 V

14 V to 30 V

0 V to 30 V

0 V to 9.7 V

Low

9.7 V to 12.7 V

12.7 V to 30 V

Transition

High

Publication Order Number:

March, 2020 − Rev. 2

FOD3125/D

12 3 4 5 6 7...18

中文翻译

下载PDF

与FOD3125SDV相关器件

型号	品牌	获取价格	描述	数据表
FOD3125SV	ONSEMI	获取价格	High Temperature, 2.5 A Output Current, Gate Drive Optocoupler
FOD3125TSR2V	ONSEMI	获取价格	High Temperature, 2.5 A Output Current, Gate Drive Optocoupler
FOD3125TSV	ONSEMI	获取价格	High Temperature, 2.5 A Output Current, Gate Drive Optocoupler
FOD3125TV	ONSEMI	获取价格	High Temperature, 2.5 A Output Current, Gate Drive Optocoupler
FOD3125V	ONSEMI	获取价格	High Temperature, 2.5 A Output Current, Gate Drive Optocoupler
FOD3150	FAIRCHILD	获取价格	High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler
FOD3150	ONSEMI	获取价格	高抗噪能力、1.0A输出电流、栅极驱动光电耦合器
FOD3150S	FAIRCHILD	获取价格	High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler
FOD3150S	ONSEMI	获取价格	高抗噪能力、1.0A输出电流、栅极驱动光电耦合器
FOD3150SD	FAIRCHILD	获取价格	High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler

与FOD3125SDV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

FOD3125SDV

FOD3125SDV 数据手册

与FOD3125SDV相关器件

与FOD3125SDV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FOD3125SDV

FOD3125SDV 数据手册

与FOD3125SDV相关器件

与FOD3125SDV相关文章

您还可以找

您在本页遇到什么问题？