Datasheet > FMY60N125S2A

FMY60N125S2A

更新时间： 2024-04-09 19:03:17

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	467K
描述
TO-247(Type:A)

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FMY60N125S2A 数据手册

Automotive

www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMY60N125S2A

Typical Capacitance

Typical C_ossstored energy

C=f(V_DS) : V_GS=0V, f=250kHz

100000

10000

1000

100

C_iss

C_oss

C_rss

0.1

100

1000

100

200

300

400

500

600

V_DS[V]

Typical Switching Characteristics vs. I_DT_ch=25

t=f(I_D):V_dd=400V,V_GS=10V/0V,R_G=15

Typical Gate Charge Characteristics

_GS=f(Q_G) : I_D=22.8A, Tch=25

10000

1000

100

400V

120V

V_DD=480V

t_r

td_(oﬀ)

t_f

td_(on)

0.1

100

I_D[A]

Q_G[nC]

Maximum Avalanche Energy vs. startingT_ch

E_(AV)=f(starting T_ch):V_cc=60V,I_(AV)<=3.5A

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

10¹

10⁰

1600

1400

1200

1000

800

600

400

200

I_AS=1.1A

10^-1

10^-2

10^-3

I_AS=2.1A

I_AS=3.5A

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

100

150

starting T_ch

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