http://www.fujielectric.com/products/semiconductor/
FMY68N60S1A
Super J MOS® series
Features
Automotive
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
Equivalent circuit schematic
Low on-state resistance
Low switching loss
Easy to use
Drain (D)
(more controllable switching dV/dt by Rg)
The reliability trial conforms to AEC Q101.
100% avalanche tested
Applications
Gate (G)
Automotive switching applications
Source (S)
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Description
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
V
V
Drain-Source Voltage
DSX
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
I
D
±68
A
Tc=25°C Note*1
I
DP
±204
30
A
V
Gate-Source Voltage
V
GS
±30
V
AC
Non-Repetitive Maximum Avalanche current
Non-Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AS
13.5
3194.4
15
A
Note *2
Note *3
Note *4
Note *5
E
AS
mJ
kV/μs
A/μs
W
dV/dt
-di/dt
Peak Diode Recovery di/dt
50
Maximum Power Dissipation
P
D
545
TC=25°C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, L=19.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-20A, -di/dt=50A/μs, VDD≤ 300V, Tch≤150°C.
Note *5 : IF≤-20A, dV/dt=15kV/μs, VDD≤ 300V, Tch≤150°C.
1
MARCH 2016