Datasheet > FMMT591Q

FMMT591Q

更新时间： 2023-12-06 20:07:47

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	569K
描述
PNP, 60V, 1A, SOT23

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中文翻译

获取价格

数据手册

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FMMT591Q 数据手册

FMMT591Q

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 9)

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

-80

-60

-7

Typ

—

Max

—

Unit

Test Condition

I_C= -100µA

—

I_C= -10mA

I_E= -100µA

V_CB= -60V

V_EB= -5.6V

V_CE= -50V

-8.1

—

-100

Emitter-Base Cutoff Current

—

I_EBO

Collector-Emitter Cut-Off Current

—

I_CES

I_C= -1mA, V_CE= -5V

I_C= -500mA, V_CE= -5V

I_C= -1A, V_CE= -5V

I_C= -2A, V_CE= -5V

100

220

175

155

—

300

—

Static Forward Current Transfer Ratio (Note 9)

—

h_FE

—

-155

-295

-180

-350

I_C= - 500mA, I_B= -50mA

I_C= - 1A, I_B= -100mA

Collector-Emitter Saturation Voltage (Note 9)

—

V_CE(SAT)

Base-Emitter Saturation Voltage (Note 9)

Base-Emitter Turn-On Voltage (Note 9)

—

965

830

-1200

-1000

V_BE(SAT)

V_BE(ON)

I_C= -1A, I_B= -100mA

I_C= -1A, V_CE= -5V

V_CE= -10V, I_C= -50mA,

f = 100MHz

Transition Frequency

150

—

MHz

f_T

Output Capacitance

Delay Time

—

C_obo

t_d

V_CB= -10V, f = 1MHz

29.1

26.5

99.3

18.9

Rise Time

Switching Time

t_r

V_CC= -10V, I_C= -500mA,

I_B1= -I_B2= -25mA

Storage Time

t_s

Fall Time

t_f

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

4 of 7

www.diodes.com

March 2017

FMMT591Q

Document number: DS37010 Rev. 2 - 2

1 2 345 6 7

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