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FMG2G75US60 PDF预览

FMG2G75US60

更新时间: 2024-11-22 22:11:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 631K
描述
Molding Type Module

FMG2G75US60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
JESD-609代码:e3元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):310 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):330 ns
标称接通时间 (ton):70 nsVCEsat-Max:2.8 V
Base Number Matches:1

FMG2G75US60 数据手册

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September 2001  
IGBT  
FMG2G75US60  
Molding Type Module  
General Description  
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power  
modules provide low conduction and switching losses as  
well as short circuit ruggedness. They are designed for  
applications such as motor control, uninterrupted power  
supplies (UPS) and general inverters where short circuit  
ruggedness is a required feature.  
Features  
UL Certified No. E209204  
Short Circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High Speed Switching  
Low Saturation Voltage : V  
High Input Impedance  
Package Code : 7PM-GA  
= 2.2 V @ I = 75A  
CE(sat)  
C
Fast & Soft Anti-Parallel FWD  
E1/C2  
Application  
C1  
E2  
AC & DC Motor Controls  
General Purpose Inverters  
Robotics  
Servo Controls  
UPS  
G1 E1  
G2 E2  
Internal Circuit Diagram  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
FMG2G75US60  
Units  
V
V
V
Collector-Emitter Voltage  
600  
± 20  
CES  
GES  
Gate-Emitter Voltage  
V
I
I
I
I
Collector Curent  
@ T  
=
25°C  
75  
A
C
C
Pulsed Collector Current  
Diode Continuous ForwardCurrent  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Isolation Voltage  
150  
A
CM (1)  
F
@ T = 100°C  
75  
A
C
150  
A
FM  
T
@ T = 100°C  
10  
us  
W
SC  
C
P
@ T  
=
C
25°C  
310  
D
J
T
-40 to +150  
-40 to +125  
2500  
2.0  
°C  
°C  
V
T
stg  
V
@ AC 1minute  
iso  
Power Terminals Screw : M5  
Mounting Screw : M5  
N.m  
N.m  
Mounting  
Torque  
2.0  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
©2001 Fairchild Semiconductor Corporation  
FMG2G75US60 Rev. A  

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