Datasheet > FMA6A

FMA6A

更新时间： 2024-11-30 23:52:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-25

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数据手册

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FMA6A 数据手册

EMA6 / UMA6N / FMA6A

Transistors

Emitter common (dual digital transistors)

EMA6 / UMA6N / FMA6A

zExternal dimensions (Units : mm)

zFeatures

1) Two DTA114T chips in a EMT or UMT or SMT

package.

EMA6

( )

(

)

1.2

1.6

zEquivalent circuit

EMA6 / UMA6N

FMA6A

(3)

(2)

(1)

(3)

(4)

(5)

ROHM : EMT5

Each lead has same dimensions

(4)

(5)

(2)

(1)

UMA6N

1.25

2.1

zPackage, marking, and packaging specifications

Type

Package

EMA6

EMT5

UMA6N

UMT5

FMA6A

SMT5

0.1Min.

Marking

Code

T2R

T148

3000

ROHM : UMT5

EIAJ : SC-88A

Each lead has same dimensions

Basic ordering unit (pieces)

8000

3000

FMA6A

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−50

Unit

VCBO

VCEO

VEBO

1.6

2.8

−50

−5

−100

EMA6 / UMA6N

FMA6A

150(TOTAL)

300(TOTAL)

150

Collector power

dissipation

0.3to0.6

Junction temperature

Storage temperature

°C

ROHM : SMT5

EIAJ : SC-74A

Each lead has same dimensions

Tstg

−55~+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

zElectrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

Typ.

−

Max.

−

Conditions

Unit

−50

−5

−

=−50µA

=−1mA

−

E=−50µA

CBO

EBO

CE(sat)

−

−0.5

−0.3

600

−

µA

CB=−50V

EB=−4V

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

C/I

=−5mA/−0.5mA

=−5V/−1mA

100

−

250

−

CE/I

Transition frequency

MHz

kΩ

EB=10V, I

=−5mA, f=100MHz

Input resistance

32.9

61.1

−

Transition frequency of the device.

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