Datasheet > FM120-N

FM120-N

更新时间： 2024-11-17 06:59:43

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PACELEADER		/
页数	文件大小	规格书
3页	207K
描述
CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER

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中文翻译

获取价格

数据手册

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FM120-N 数据手册

FM120-N THRU FM1100-N

CHIP SCHOTTKY BARRIER RECTIFIER

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V

SOD-323

0.106 (2.7)

0.091 (2.3)

0.012(0.3) Typ.

0.057 (1.45)

0.041 (1.05)

0.047 (1.2)

0.031 (0.8)

0.016(0.4) Typ.

FEATURES

MECHANICAL DATA

• Batch process design, excellent power dissipation offers

• Epoxy : UL94-V0rated flame retardant

• Case : Moldedplastic, SOD-323

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Terminals:Plated terminals, solderableper MIL-STD-750,

• Low power loss, high efficiency.

Method 2026

• High current capability, low forward voltage drop.

• High surge capability.

• Polarity : Indicatedby cathode band

• Mounting Position :Any

• Guardring for overvoltage protection.

• Very tiny plastic SMD package.

• Weight : Approximated 0.008gram

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

(AT T_A=25 C unless otherwise noted)

MAXIMUM RATING

MAX.

1.0

Symbol

I_O

TYP.

UNIT

MIN.

PARAMETER

CONDITIONS

Forward rectified current

See Fig.1

8.3ms single halfsine-wave superimposed on

rate load (JEDECmethode)

I_FSM

Forward surge current

V_R= V_RRMT_A= 25 C

0.5

I_R

Reverse current

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

R_èJA

C_J

C/W

Diode junction capacitance

Storage temperature

120

f=1MHz and applied4V DC reversevoltage

+175

-65

T_STG

Operating

V_R

V_F

V_RMS

SYMBOLS

V_RRM

temperature

(V)

T_J, ( C)

FM120-N

FM130-N

FM140-N

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.55

-55 to +125

FM150-N

0.70

FM160-N

FM180-N

FM1100-N

-55 to +150

0.85

100

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