FM120 THRU FM1200
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SMA-F
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
0.196(4.9)
0.180(4.5)
• High current capability, low forward voltage drop.
• High surge capability.
0.012(0.3) Typ.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.106(2.7)
0.091(2.3)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. FM120-H.
0.068(1.7)
0.060(1.5)
Mechanical data
0.032(0.8) Typ.
0.032 (0.8) Typ.
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-F
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
SYMBOL
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
IO
1.0
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
Forward surge current
A
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
0.5
10
IR
mA
Reverse current
CJ
pF
OC
Diode junction capacitance
Storage temperature
120
f=1MHz and applied 4V DC reverse voltage
+175
-65
TSTG
Operating
*4
*1
*3
*2
VRMS
VR
VF
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
(V)
(V)
20
30
40
50
14
21
28
35
42
56
70
105
FM120
FM130
FM140
20
30
40
50
60
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.50
-55 to +125
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
FM150
FM160
FM180
FM1100
0.70
0.85
60
80
80
100
150
200
100
150
200
0.90
0.92
FM1150
FM1200
140
MDD ELECTRONIC