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FKPF3N80TU PDF预览

FKPF3N80TU

更新时间: 2024-11-23 21:14:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网三端双向交流开关栅极
页数 文件大小 规格书
7页 141K
描述
TRIAC, 800V V(DRM), 3A I(T)RMS, TO-220AB, LEAD FREE, TO-220F, 3 PIN

FKPF3N80TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.77
外壳连接:ISOLATED配置:SINGLE
换向电压的临界上升率-最小值:10 V/us最大直流栅极触发电流:20 mA
最大直流栅极触发电压:1.5 V最大维持电流:30 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:0.02 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大均方根通态电流:3 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE触发设备类型:TRIAC
Base Number Matches:1

FKPF3N80TU 数据手册

 浏览型号FKPF3N80TU的Datasheet PDF文件第2页浏览型号FKPF3N80TU的Datasheet PDF文件第3页浏览型号FKPF3N80TU的Datasheet PDF文件第4页浏览型号FKPF3N80TU的Datasheet PDF文件第5页浏览型号FKPF3N80TU的Datasheet PDF文件第6页浏览型号FKPF3N80TU的Datasheet PDF文件第7页 
FKPF3N80  
Application Explanation  
Switching mode power supply, light dimmer, electric flasher unit  
TV sets, stereo, refrigerator, washing machine, bread maker  
Electric blanket, solenoid driver, small motor control  
Photo copier, electric tool  
2
1
1: T1  
2: T2  
3: Gate  
3
TO-220F  
1
2 3  
Bi-Directional Triode Thyristor Planar Silicon  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Rating  
Units  
(Note1 )  
V
Repetitive Peak Off-State Voltage  
800  
V
DRM  
Symbol  
Parameter  
Conditions  
Rating  
Units  
I
RMS On-State Current  
Commercial frequency, sine full wave 360°  
3
A
T (RMS)  
conduction, T =110°C  
C
I
Surge On-State Current  
Sinewave 1 full cycle, peak value,  
50Hz  
60Hz  
30  
33  
4.5  
A
A
A s  
TSM  
2
non-repetitive  
2
2
I t  
I t for Fusing  
Value corresponding to 1 cycle of halfwave,  
surge on-state current, tp=10ms  
di/dt  
Critical Rate of Rise of On-State Current  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Voltage  
I
= 2x I , tr 100ns  
50  
5
0.5  
A/µs  
W
W
V
G
GT  
P
P
V
GM  
G (AV)  
GM  
10  
I
Peak Gate Current  
2
A
GM  
T
T
V
Junction Temperature  
Storage Temperature  
Isolation Voltage  
- 40 ~ 125  
- 40 ~ 125  
1500  
°C  
°C  
V
J
STG  
Ta=25°C, AC 1 minute, T T G terminal to  
1 2  
case  
iso  
Thermal Characteristic  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
(Note 4)  
R
Thermal Resistance  
Junction to case  
-
-
4.3  
°C/W  
th(J-C)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

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