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FJV3105R PDF预览

FJV3105R

更新时间: 2024-09-30 22:31:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 88K
描述
NPN Epitaxial Silicon Transistor

FJV3105R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.78其他特性:BUILT IN BIAS RESISTOR RATIO IS 2.13
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

FJV3105R 数据手册

 浏览型号FJV3105R的Datasheet PDF文件第2页浏览型号FJV3105R的Datasheet PDF文件第3页浏览型号FJV3105R的Datasheet PDF文件第4页 
FJV3105R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
3
Built in bias Resistor (R =4.7K, R =10K)  
1
2
Complement to FJV4105R  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R1  
R25  
B
R2  
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
10  
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =100µA, I =0  
50  
C
B
I
V
=40V, I =0  
0.1  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =5mA  
30  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =0.5mA  
V
CE  
C
B
C
V
=10V, I =5mA  
3.7  
pF  
ob  
CE  
C
f=1MHz  
f
Current Gain Bandwidth Product  
Input Off Voltage  
V
V
V
=10V, I =5mA  
250  
MHz  
V
T
CE  
CE  
CE  
C
V (off)  
=5V, I =100µA  
0.3  
I
C
V (on)  
Input On Voltage  
=0.3V, I =20mA  
2.5  
6.2  
V
I
C
R
Input Resistor  
3.2  
4.7  
KΩ  
1
R /R  
Resistor Ratio  
0.42  
0.47  
0.52  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A, July 2002  

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