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FII30-12D PDF预览

FII30-12D

更新时间: 2024-01-21 15:07:25
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 50K
描述
Fast IGBT Chopper in ISOPLUS i4-PACTM

FII30-12D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:ISOPLUS
包装说明:ISOPLUS, I4PAC-5针数:5
Reach Compliance Code:compliant风险等级:5.66
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
最大集电极电流 (IC):30 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSIP-T5
JESD-609代码:e1元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):570 ns
标称接通时间 (ton):175 nsBase Number Matches:1

FII30-12D 数据手册

 浏览型号FII30-12D的Datasheet PDF文件第2页 
Advanced Technical Information  
IC25  
VCES  
= 30 A  
= 1200 V  
Fast IGBT Chopper  
FII 30-12D  
in ISOPLUS i4-PACTM  
VCE(sat)typ. = 2.3 V  
1
5
Features  
IGBT  
• NPTIGBT  
- low saturation voltage  
- no latch up  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
- positive temperature coefficient for  
easy paralleling  
±
VGES  
20  
• HiPerFREDTM diode  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
30  
18  
A
A
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
±
ICM  
VCEK  
VGE = 15 V; RG = 82 ; TVJ = 125°C  
35  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
• ISOPLUS i4-PACTM package  
- isolated back surface  
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
±
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 82 ; TVJ = 125°C  
non-repetitive  
10  
Ptot  
TC = 25°C  
125  
- industry standard outline  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• single phaseleg  
- buck-boost chopper  
• H bridge  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.6  
3.0  
V
V
- power supplies  
- induction heating  
- four quadrant DC drives  
- controlled rectifier  
• three phase bridge  
- AC drives  
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.9 mA  
mA  
0.9  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
- controlled rectifier  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
100  
75  
500  
70  
3.0  
2.4  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 20 A  
±
VGE = 15 V; RG = 82 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 15 V; IC = 18 A  
1000  
70  
pF  
nC  
RthJC  
1.0 K/W  
© 2000 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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