是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T5 | Reach Compliance Code: | compliant |
风险等级: | 5.27 | 其他特性: | HIGH RELIABILITY |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 40 A |
集电极-发射极最大电压: | 600 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSIP-T5 |
JESD-609代码: | e1 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 310 ns |
标称接通时间 (ton): | 100 ns | VCEsat-Max: | 2.2 V |
Base Number Matches: | 1 |
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