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FGD4536TM_F065 PDF预览

FGD4536TM_F065

更新时间: 2024-01-31 11:36:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管功率控制
页数 文件大小 规格书
8页 1068K
描述
360V, N-CHANNEL IGBT, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

FGD4536TM_F065 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DPAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliant风险等级:5.73
外壳连接:COLLECTOR集电极-发射极最大电压:360 V
配置:SINGLE门极发射器阈值电压最大值:4 V
门极-发射极最大电压:30 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):292 ns标称接通时间 (ton):26 ns
Base Number Matches:1

FGD4536TM_F065 数据手册

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Rev. I66  
©2011 Fairchild Semiconductor Corporation  
FGD4536 Rev. C1  
8
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