Datasheet > FGD3N60LSDTM

FGD3N60LSDTM

更新时间： 2024-01-27 01:16:46

品牌	Logo	应用领域
安森美 - ONSEMI		电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
9页	1101K
描述
IGBT，600V，3A，1.2V，DPAK，平面

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FGD3N60LSDTM 数据手册

Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current

Figure 14. Forward Characteristics

100

Tc = 25°C

Common Emitter

Vcc = 480 V, V_GE= 10V

Tc = 100°C

R_G= 470Ω

T_C= 25°C

T_C= 125°C

Eoff

Eon

1000

100

0.1

Collector Current, I_C[A]

Forward Voltage Drop, V_F[V]

Figure 15. Forward Voltage Drop Vs Tj

Figure 16. SOA Characteristics

100

2.8

Ic MAX (Pulsed)

2.4

50µs

100µs

Ic MAX (Continuous)

I_F=6 A

1ms

2.0

DC Operation

1.6

I_F=3 A

Single Nonrepetitive

0.1

Pulse Tc = 25°C

Curves must be derated

linearly with increase

in temperature

I_F=1.5 A

1.2

0.01

100

125

0.1

100

1000

Junction Temperature, Tj [°C]

Collector - Emitter Voltage, V_CE[V]

Figure 17. Transient Thermal Impedance of IGBT

0.5

0.2

0.1

0.05

0.02

0.01

Pdm

0.1

single pulse

Duty factor D = t1 / t2

Peak Tj = Pdm

× Zthjc + T

0.01

1E-5

1E-4

1E-3

0.01

0.1

Rectangular Pulse Duration [sec]

www.onsemi.com

1...4 5 678 9

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