Datasheet > FGD3N60LSD_06

FGD3N60LSD_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	866K
描述
IGBT

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FGD3N60LSD_06 数据手册

September 2006

FGD3N60LSD

IGBT

Features

Description

•

High Current Capability

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide

very low conduction losses. The device is designed for applica-

tions where very low On-Voltage Drop is a required feature.

Very Low Saturation Voltage : V_CE(sat)= 1.2 V @ I_C= 3A

High Input Impedance

Applications

•

HID Lamp Applications

•

Piezo Fuel Injection Applications

D-PAK

Absolute Maximum Ratings

Symbol

Description

FGD3N60LSD

Units

V_CES

V_GES

I_C

Collector-Emitter Voltage

Gate-Emitter Voltage

600

± 25

Collector Current

@ T_C

25°C

Collector Current

@ T_C= 100°C

I_{CM (1)}

I F

Pulsed Collector Current

Diode Continous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Derating Factor

(1)

@ T_C= 100°C

I FM

P_D

@ T_C

25°C

W/°C

°C

0.32

T_J

Operating Junction Temperature

Storage Temperature Range

-55 to +150

250

T_stg

T_L

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

3.1

Units

R_θJC

Thermal Resistance, Junction-to-Case

°C/W

(IGBT)

R_θJA

Thermal Resistance, Junction-to-Ambient (PCB Mount) ₍₂₎

100

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

FGD3N60LSD Rev. B

www.fairchildsemi.com

12 3 4 5 6 7 8

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