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FGD4536TM PDF预览

FGD4536TM

更新时间: 2024-01-02 01:30:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制光电二极管瞄准线双极性晶体管
页数 文件大小 规格书
8页 1135K
描述
360 V PDP Trench IGBT

FGD4536TM 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.71Is Samacsys:N
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FGD4536TM 数据手册

 浏览型号FGD4536TM的Datasheet PDF文件第2页浏览型号FGD4536TM的Datasheet PDF文件第3页浏览型号FGD4536TM的Datasheet PDF文件第4页浏览型号FGD4536TM的Datasheet PDF文件第5页浏览型号FGD4536TM的Datasheet PDF文件第6页浏览型号FGD4536TM的Datasheet PDF文件第7页 
September 2013  
FGD4536  
360 V PDP Trench IGBT  
Features  
General Description  
High Current Capability  
Low Saturation Voltage: V  
High Input Impedance  
Fast Switching  
Using novel trench IGBT technology, Fairchild’s new series of  
trench IGBTs offer the optimum performance for consumer  
appliances and PDP TV applications where low conduction and  
switching losses are essential.  
= 1.59 V @ I = 50 A  
C
CE(sat)  
RoHS Compliant  
Applications  
PDP TV, Consumer Appliances  
C
G
TO-252/D-PAK  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
360  
Unit  
V
V
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Pulsed Collector Current  
V
V
A
CES  
30  
GES  
o
@ T = 25 C  
220  
I
C
C pulse(1)*  
o
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
@ T = 25 C  
125  
50  
W
W
C
P
D
o
@ T = 100 C  
C
o
T
T
-55 to +150  
-55 to +150  
C
J
o
C
stg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
o
T
300  
C
L
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
1.0  
Unit  
o
R
R
(IGBT)  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
C/W  
JC  
o
62.5  
C/W  
JA  
Notes:  
(1) Half Sine Wave, D < 0.01, pluse width < 1sec  
* Ic_pluse limited by max Tj  
©2011 Fairchild Semiconductor Corporation  
FGD4536 Rev. C1  
1
www.fairchildsemi.com  

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