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FGD3440G2-F085 PDF预览

FGD3440G2-F085

更新时间: 2024-01-18 13:06:15
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 1260K
描述
IGBT,400V,25A,1.30V,335mJ,DPAKEcoSPARK® II,N 沟道点火

FGD3440G2-F085 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DPAK, 3/2 PINReach Compliance Code:compliant
Factory Lead Time:43 weeks 1 day风险等级:5.73
外壳连接:COLLECTOR最大集电极电流 (IC):26.9 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
最大降落时间(tf):15 ns门极发射器阈值电压最大值:2.2 V
门极-发射极最大电压:14 VJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):166 W
最大上升时间(tr):7 ns表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:AUTOMOTIVE IGNITION晶体管元件材料:SILICON
最大关闭时间(toff):26 ns标称断开时间 (toff):7.6 ns
最大开启时间(吨):11 ns标称接通时间 (ton):3 ns
VCEsat-Max:1.75 VBase Number Matches:1

FGD3440G2-F085 数据手册

 浏览型号FGD3440G2-F085的Datasheet PDF文件第1页浏览型号FGD3440G2-F085的Datasheet PDF文件第3页浏览型号FGD3440G2-F085的Datasheet PDF文件第4页浏览型号FGD3440G2-F085的Datasheet PDF文件第5页浏览型号FGD3440G2-F085的Datasheet PDF文件第6页浏览型号FGD3440G2-F085的Datasheet PDF文件第7页 
FGB3440G2-F085 / FGD3440G2-F085  
FGP3440G2-F085  
®
EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT  
Features  
Applications  
„ Automotive lgnition Coil Driver Circuits  
„ SCIS Energy = 335mJ at TJ = 25oC  
„ Logic Level Gate Drive  
„ Qualified to AEC Q101  
„ RoHS Compliant  
„ Coil On Plug Applications  
Package  
Symbol  
JEDEC TO-263AB  
JEDEC TO-220AB  
E
D²-Pak  
C
G
COLLECTOR  
G
E
R1  
GATE  
JEDEC TO-252AA  
D-Pak  
R2  
G
EMITTER  
COLLECTOR  
(FLANGE)  
E
Device Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
V
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)  
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)  
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)  
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)  
400  
28  
V
335  
mJ  
mJ  
A
195  
IC25  
Collector Current Continuous, at VGE = 4.0V, TC = 25°C  
Collector Current Continuous, at VGE = 4.0V, TC = 110°C  
Gate to Emitter Voltage Continuous  
26.9  
25  
IC110  
VGEM  
A
±10  
V
Power Dissipation Total, at TC = 25°C  
Power Dissipation Derating, for TC > 25oC  
166  
W
PD  
1.1  
W/oC  
oC  
oC  
oC  
oC  
kV  
TJ  
Operating Junction Temperature Range  
-40 to +175  
-40 to +175  
300  
TSTG  
TL  
Storage Junction Temperature Range  
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)  
Max. Lead Temp. for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at100pF, 1500Ω  
TPKG  
ESD  
260  
4
Publication Order Number:  
@2014 Semiconductor Components Industries, LLC.  
August-2017, Rev.3  
FGB3440G2-F085/D