Datasheet > FGD2040G3-F085

FGD2040G3-F085

更新时间： 2023-09-03 20:28:58

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
6页	125K
描述
IGBT, EcoSPARK® 3 200mJ, 400V, N-Channel Ignition

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FGD2040G3-F085 数据手册

FGD2040G3−F085

TYPICAL CHARACTERISTICS

1500

f = 1 MHz

Resistive t

OFF

1250

1000

Inductive t

Resistive t

IES

750

500

OES

250

RES

100

125

150

175

10,000

T , JUNCTION TEMPERATURE (°C)

, COLLECTOR−TO−EMITTER (V)

Figure 13. Switching Time vs. Junction

Temperature

Figure 14. Capacitance vs.

Collector−to−Emitter Voltage

420

= 10 mA

CER

410

400

= −40°C

390

380

= 25°C

= 175°C

100

1000

R , SERIES GATE RESISTANCE (W)

Figure 15. Break Down Voltage vs. Series Resistance

0.5 Duty Cycle

0.2

0.1

0.05

0.02

0.1

0.01

Single Pulse

0.00001

0.01

0.0001

0.001

0.01

0.1

t, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction−to−Case

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