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FFPF06F150STU PDF预览

FFPF06F150STU

更新时间: 2024-11-25 20:01:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网高压二极管
页数 文件大小 规格书
4页 53K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 1500V V(RRM), Silicon, TO-220F, 2 PIN

FFPF06F150STU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72其他特性:HIGH RELIABILITY
应用:HIGH VOLTAGE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:1500 V
最大反向恢复时间:0.17 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

FFPF06F150STU 数据手册

 浏览型号FFPF06F150STU的Datasheet PDF文件第2页浏览型号FFPF06F150STU的Datasheet PDF文件第3页浏览型号FFPF06F150STU的Datasheet PDF文件第4页 
FFPF06F150S  
Features  
High voltage and high reliability  
High speed switching  
Low forward voltage  
TO-220F  
Applications  
1
2
Suitable for damper diode in horizontal  
deflection circuits  
1. Cathode  
2. Anode  
DAMPER DIODE  
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Symbol  
VRRM  
IF(AV)  
IFSM  
Parameter  
Value  
1500  
6
Units  
Peak Repetitive Reverse Voltage  
V
A
A
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@TC = 125°C  
60  
60Hz Single Half-Sine Wave  
TJ, TSTG  
Operating Junction and StorageTemperature  
- 65 to +150  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RθJC  
Maximum Thermal Resistance, Junction to Case  
4.0  
°C/W  
Electrical Characteristics TC=25 °C unless otherwise noted  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
VFM  
Maximum Instantaneous Forward Voltage  
I F = 6A  
V
*
TC = 25 °C  
C = 125 °C  
-
-
-
-
1.6  
1.4  
I
F = 6A  
T
IRM  
Maximum Instantaneous Reverse Current  
@ rated VR  
µA  
*
TC = 25 °C  
C = 125 °C  
-
-
-
-
7
60  
T
trr  
tfr  
VFRM  
Maximum Reverse Recovery Time  
(IF =1A, di/dt = 50A/µs)  
-
-
-
-
-
-
170  
350  
17  
ns  
ns  
V
Maximum Forward Recovery Time  
(IF =6.5A, di/dt = 50A/µs)  
Maximum Forward Recovery Voltage  
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
©2000 Fairchild Semiconductor International  
Rev. F, September 2000  

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