Datasheet > FF11MR12W1M1P_B11

FF11MR12W1M1P_B11

更新时间： 2024-03-04 09:49:42

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	422K
描述
PressFIT

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中文翻译

获取价格

数据手册

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FF11MR12W1M1P_B11 数据手册

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FF11MR12W1M1P_B11

VorläufigeꢀDaten

PreliminaryꢀData

SichererꢀRückwärts-ArbeitsbereichꢀMOSFETꢀ(RBSOA)

reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀMOSFETꢀ(RBSOA)

TransienterꢀWärmewiderstandꢀMOSFETꢀ

transientꢀthermalꢀimpedanceꢀMOSFETꢀ

I_Dꢀ=ꢀfꢀ(V_DS

)

Z_thJHꢀ=ꢀfꢀ(t)

V_GSꢀ=ꢀ-5ꢀVꢀ/ꢀ15ꢀV,ꢀT_vjꢀ=ꢀ150°C,ꢀR_Gꢀ=ꢀ3,9ꢀΩ

240

I_D, Modul

I_D, Chip

Z_th: MOSFET

200

160

120

0,1

r_i[K/W]: 0,043

τ_i[s]: 0,00245 0,0202 0,154 0,154

0,112 0,252 0,073

0,01

0,001

200

400

600

800

1000 1200 1400

0,01

0,1

t [s]

V_DS[V]

NTC-Widerstand-Temperaturkennlinieꢀ(typisch)

NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)

Rꢀ=ꢀfꢀ(T_NTC

)

100000

R_typ

10000

1000

100

T_NTC[°C]

100 120 140 160

Datasheet

Vꢀ2.0

2020-02-27

1 2 3 456 7

中文翻译

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