Datasheet > FDZ375P_10

FDZ375P_10

更新时间： 2024-09-16 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	297K
描述
P-Channel 1.5 V Specified PowerTrenchÂ® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mÎ©

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FDZ375P_10 数据手册

April 2010

FDZ375P

P-Channel 1.5 V Specified PowerTrench^®Thin WL-CSP MOSFET

-20 V, -3.7 A, 78 mΩ

Features

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench^®process

with state of the art "fine pitch" Thin WLCSP packaging process,

the FDZ375P minimizes both PCB space and r_DS(on). This

advanced WLCSP MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, ultra-low profile

Max r_DS(on)= 78 mΩ at V_GS= -4.5 V, I_D= -2.0 A

Max r_DS(on)= 92 mΩ at V_GS= -2.5 V, I_D= -1.5 A

Max r_DS(on)= 112 mΩ at V_GS= -1.8 V, I_D= -1.0 A

Max r_DS(on)= 150 mΩ at V_GS= -1.5 V, I_D= -1.0 A

Occupies only 1.0 mm²of PCB area. Less than 30% of the

packaging, low gate charge, and low r_DS(on)

area of 2 x 2 BGA

Ultra-thin package: less than 0.4 mm height when mounted to

PCB

Applications

RoHS Compliant

Battery management

Load switch

Battery protection

Pin 1

TOP

BOTTOM

WL-CSP 1.0X1.0 Thin

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-20

Units

Drain to Source Voltage

Gate to Source Voltage

±8

-Continuous

-Pulsed

Power Dissipation

T_A= 25°C

(Note 1a)

-3.7

I_D

-12

T_A= 25°C

(Note 1a)

(Note 1b)

1.7

P_D

0.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

260

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7 ”

Tape Width

8 mm

Quantity

FDZ375P

WL-CSP 1.0X1.0 Thin

5000 units

FDZ375P Rev.C

www.fairchildsemi.com

12 3 4 5 6

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