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FDZ2554PZ PDF预览

FDZ2554PZ

更新时间: 2024-11-20 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 150K
描述
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET

FDZ2554PZ 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:GRID ARRAY, R-PBGA-B18
针数:18Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6.5 A最大漏极电流 (ID):6.5 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PBGA-B18JESD-609代码:e0
湿度敏感等级:1元件数量:2
端子数量:18工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:GRID ARRAY
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.1 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDZ2554PZ 数据手册

 浏览型号FDZ2554PZ的Datasheet PDF文件第2页浏览型号FDZ2554PZ的Datasheet PDF文件第3页浏览型号FDZ2554PZ的Datasheet PDF文件第4页浏览型号FDZ2554PZ的Datasheet PDF文件第5页浏览型号FDZ2554PZ的Datasheet PDF文件第6页 
August 2004  
FDZ2554PZ  
Monolithic Common Drain P-Channel 2.5V Specified PowerTrenchBGA MOSFET  
General Description  
Features  
Combining Fairchild’s advanced 2.5V specified  
PowerTrench process with state-of-the-art BGA  
packaging, the FDZ2554PZ minimizes both PCB space  
–6.5 A, –20 V. RDS(ON) = 28 m@ VGS = –4.5 V  
RDS(ON) = 45 m@ VGS = –2.5 V  
and RDS(ON)  
MOSFET embodies  
technology which enables the device to combine  
excellent thermal transfer characteristics, high current  
handling capability, ultra-low profile packaging, low gate  
.
This monolithic common drain BGA  
breakthrough in packaging  
>4800V ESD Protection  
Occupies only 0.10 cm2 of PCB area:  
a
1/3 the area of SO-8  
Ultra-thin package: less than 0.80 mm height when  
mounted to PCB  
charge, and low RDS(ON)  
.
Applications  
Outstanding thermal transfer characteristics:  
significantly better than SO-8  
Battery management  
Load switch  
Ultra-low Qg x RDS(ON) figure-of-merit  
High power and current handling capability  
Battery protection  
S
D
S
D
S
S
S
D
S
S
S
Pin 1  
G
Q2  
Q1  
Q1  
G
S
D
G
D
S
D
S
D
Q2  
Pin 1  
G
S
Top  
Bottom  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
–20  
Units  
VDSS  
Drain-Source Voltage  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±12  
–6.5  
–20  
2.1  
(Note 1a)  
(Note 1a)  
PD  
Power Dissipation (Steady State)  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
(Note 1)  
60  
6.3  
0.6  
RθJA  
RθJB  
RθJC  
°C/W  
Thermal Resistance, Junction-to-Ball  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
2554Z  
FDZ2554PZ  
7’’  
12mm  
3000 units  
FDZ2554PZ Rev. C3 (W)  
2004 Fairchild Semiconductor Corporation  

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