Datasheet > FDMS003N08C

FDMS003N08C

更新时间： 2023-09-03 20:31:14

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	1452K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，147 A，3.1 mΩ

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FDMS003N08C

N-Channel Shielded Gate PowerTrench^®MOSFET

80 V, 147 A, 3.1 mΩ

Features

General Description

Shielded Gate MOSFET Technology

This N-Channel MV MOSFET is produced using ON

Semiconductor’s advanced PowerTrench^®process that

incorporates Shielded Gate technology. This process has been

optimized to minimise on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Max r_DS(on)= 3.1 mΩ at V_GS= 10 V, I_D= 56 A

Max r_DS(on)= 8.1 mΩ at V_GS= 6 V, I_D= 28 A

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

Applications

MSL1 robust package design

Primary DC-DC MOSFET

Synchronous Rectifier in DC-DC and AC-DC

Motor Drive

100% UIL tested

RoHS Compliant

Solar

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

±20

T_C= 25 °C

_C= 100 °C

(Note 5)

(Note 1a)

(Note 4)

(Note 3)

147

I_D

-Continuous

T_A= 25 °C

-Pulsed

658

E_AS

Single Pulse Avalanche Energy

Power Dissipation

486

T_C= 25 °C

T_A= 25 °C

125

P_D

(Note 1a)

2.7

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS003N08C

Power 56

3000 units

Semiconductor Components Industries, LLC, 2017

May, 2017, Rev. 1.0

Publication Order Number:

FDMS003N08C/D

123 4 5 6 7

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