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FDD10N20LZ PDF预览

FDD10N20LZ

更新时间: 2024-01-06 23:34:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 322K
描述
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

FDD10N20LZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.73
雪崩能效等级(Eas):121 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):7.6 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD10N20LZ 数据手册

 浏览型号FDD10N20LZ的Datasheet PDF文件第2页浏览型号FDD10N20LZ的Datasheet PDF文件第3页浏览型号FDD10N20LZ的Datasheet PDF文件第4页浏览型号FDD10N20LZ的Datasheet PDF文件第5页浏览型号FDD10N20LZ的Datasheet PDF文件第6页浏览型号FDD10N20LZ的Datasheet PDF文件第7页 
March 2013  
FDD10N20LZ  
N-Channel UniFET MOSFET  
200 V, 7.6 A, 360 m  
TM  
Features  
Description  
RDS(on) = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A  
Low Gate Charge (Typ.12 nC)  
Low Crss (Typ.11 pF)  
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage  
MOSFET family based on planar stripe and DMOS technology.  
This MOSFET is tailored to reduce on-state resistance, and to  
provide better switching performance and higher avalanche  
energy strength. This device family is suitable for switching  
power converter applications such as power factor correction  
(PFC), flat panel display (FPD) TV power, ATX and electronic  
lamp ballasts.  
100% Avalanche Tested  
Improved dv/dt Capability  
ESD Improved Capability  
RoHS Compliant  
Appications  
LED TV  
Consumer Applicances  
Uninterruptible Power Supply  
D
G
G
S
D-PAK  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDD10N20LZ  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
200  
±20  
V
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
7.6  
ID  
Drain Current  
A
4.5  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
30  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
121  
7.6  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
8.3  
mJ  
V/ns  
W
W/oC  
oC  
4.5  
(TC = 25oC)  
- Derate above 25oC  
83  
PD  
Power Dissipation  
0.7  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
FDD10N20LZ  
RJC  
RJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
1.5  
oC/W  
110  
1
www.fairchildsemi.com  
©2010 Fairchild Semiconductor Corporation  
FDD10N20LZ Rev. C0  

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