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FDD10AN06_F085_12 PDF预览

FDD10AN06_F085_12

更新时间: 2024-09-25 12:24:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 390K
描述
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ

FDD10AN06_F085_12 数据手册

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Dec 2012  
FDD10AN06A0_F085  
N-Channel PowerTrench® MOSFET  
60V, 50A, 10.5mΩ  
Features  
Applications  
rDS(ON) = 9.4m(Typ.), VGS = 10V, ID = 50A  
Qg(tot) = 28nC (Typ.), VGS = 10V  
Low Miller Charge  
Motor / Body Load Control  
ABS Systems  
Powertrain Management  
Injection Systems  
Low Qrr Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
DC-DC converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 12V and 24V systems  
RoHS Compliant  
Formerly developmental type 82560  
DRAIN  
(FLANGE)  
D
GATE  
G
SOURCE  
S
TO-252AA  
FDD SERIES  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
60  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
V
V
±20  
Continuous (TC < 115oC, VGS = 10V)  
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)  
Pulsed  
50  
A
ID  
11  
Figure 4  
429  
A
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
mJ  
Power dissipation  
Derate above 25oC  
135  
W
PD  
0.9  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-252  
Thermal Resistance Junction to Ambient TO-252  
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area  
1.11  
100  
52  
oC/W  
oC/W  
oC/W  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2012 Fairchild Semiconductor Corporation  
FDD10AN06A0_F085 Rev. C1  

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