Datasheet > FDA28N50F_12

FDA28N50F_12

更新时间： 2024-11-29 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	399K
描述
N-Channel MOSFET 500V, 28A, 0.175Î©

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FDA28N50F_12 数据手册

January 2012

UniFET^TM

FDA28N50F

N-Channel MOSFET

500V, 28A, 0.175Ω

Features

Description

•

R_DS(on)= 0.140Ω ( Typ.)@ V_GS= 10V, I_D= 14A

Low Gate Charge ( Typ. 80nC)

Low C_rss( Typ. 38pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advance technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These device are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

RoHS Compliant

TO-3PN

G D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

500

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

112

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

2352

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

310

P_D

Power Dissipation

2.5

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

Ratings

0.4

Units

R_θJC

R_θCS

R_θJA

0.24

^oC/W

FDA28N50F Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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