Datasheet > FD059H06A5F

FD059H06A5F

更新时间： 2024-02-06 06:18:30

品牌	Logo	应用领域
威世 - VISHAY		快速恢复二极管
页数	文件大小	规格书
3页	95K
描述
Rectifier Diode, 1 Phase, 1 Element, Silicon, DIE-2

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FD059H06A5F 技术参数

生命周期：	Active	零件包装代码：	DIE
包装说明：	DIE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.40	风险等级：	5.74
应用：	FAST RECOVERY	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	S-XXUC-N2
元件数量：	1	相数：	1
端子数量：	2	封装主体材料：	UNSPECIFIED
封装形状：	SQUARE	封装形式：	UNCASED CHIP
认证状态：	Not Qualified	最大反向恢复时间：	0.028 µs
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UNSPECIFIED	Base Number Matches：	1

FD059H06A5F 数据手册

I - 0512J rev. A

FD059H06A5B

FRED Die in Wafer Form

600V

V_F= 1.45V

(max.)

z 100% Tested at Probe c

z Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics

Parameter

Description

Min

–––

600V

–––

Typ

–––

Max

1.45V

–––

Test Conditions

T_J= 25°C, I_F= 1A

T_J= 25°C, I_RRM= 100µA

T_J= 25°C, V_RRM= 600V

I_F= 1A, di/dt = 100A/µs, V_R= 30V

V_FM

V_RRM

I_RM

Maximum Forward Voltage

Minimum Reverse Breakdown Voltage

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

4µA

t_rr

–––

28 ns

–––

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3mm)

0.059" x 0.059" (see drawing)

125 mm

14 µm

90 ±10 µm

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

TO-220

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Package

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 1.50 +0, - 0.01

(59 +0, - 0.4)

b = 1.50 +0, - 0.01

(59 +0, - 0.4)

c = 0.79 +0, - 0.01

(31.2 +0, - 0.4)

d = 0.79 +0, - 0.01

(31.2 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

125 (4.92)

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

d Part number shown is for die in waveform. Contact factory for these other options.

06/10/03

www.vishay.com

Document Number: 93758

12 3

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与FD059H06A5F相关器件

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FD059U06A5B	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER	获取价格
FD059U06A5F	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER	获取价格
FD059U06A5P	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER	获取价格
FD060U02A5F	INFINEON	Rectifier Diode, 1 Element, 200V V(RRM),	获取价格
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