August 2012
SuperFET® II
FCU900N60Z
600V N-Channel MOSFET
Features
•
•
•
•
•
675V @TJ = 150oC
Description
Max. RDS(on) = 900mΩ
®
SuperFET II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
Ultra Low Gate Charge (Typ. Qg = 13nC)
Low Effective Output Capacitance (Typ. Coss.eff = 49pF)
100% Avalanche Tested
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
•
ESD Improved Capacity
®
Consequently, SuperFET II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
I-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Parameter
Rating
600
Units
Drain to Source Voltage
Gate to Source Voltage
V
-DC
±20
VGSS
ID
V
A
-AC
(f>1Hz)
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
4.5
Drain Current
2.8
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
13.5
47.5
1
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
0.52
20
mJ
dv/dt
PD
V/ns
100
(TC = 25oC)
- Derate above 25oC
52
W
W/oC
oC
Power Dissipation
0.42
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Units
Rating
2.4
RθJC
RθJA
oC/W
100
©2012 Fairchild Semiconductor Corporation
FCU900N60Z Rev. C0
1
www.fairchildsemi.com