November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
High density cell design for low RDS(ON)
.
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
2N7000
S
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
2N7000
2N7002
60
NDS7002A
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
V
V
60
VDGR
VGSS
Drain-Gate Voltage (RGS < 1 MW)
Gate-Source Voltage - Continuous
V
±20
- Non Repetitive (tp < 50µs)
±40
115
800
200
1.6
ID
Maximum Drain Current - Continuous
- Pulsed
200
500
400
3.2
280
1500
mA
PD
Maximum Power Dissipation
Derated above 25oC
300
mW
mW/°C
°C
2.4
TJ,TSTG
TL
Operating and Storage Temperature Range
-55 to 150
-65 to 150
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
625
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
312.5
417
°C/W
R
JA
q
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1