Datasheet > 2N7002N1PT

2N7002N1PT

更新时间： 2022-12-18 10:23:06

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	127K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002N1PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002N1PT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

FBPT-923

FEATURE

* Small surface mounting type. (FBPT-923)

* High density cell design for low RDS(ON).

* Suitable for high packing density.

* Rugged and reliable.

0.5±0.05

1.0±0.05

0.37(REF.)

0.25(REF.)

* High saturation current capability.

* Voltage controlled small signal switch.

1.0±0.05

CONSTRUCTION

0.05±0.04

* N-Channel Enhancement

0.68±0.05

0.42±0.05

0.3±0.05

(3)

CIRCUIT

0.26±0.05

(1)

Dimensions in millimeters

FBPT-923

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002N1PT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 M

)

Ω

Gate-Source Voltage - Continuous

±20

- Non Repetitive (tp < 50µs)

TA= 25°C

250

190

I_D

Maximum Drain Current - Continuous

- Pulsed

TA= 70°C

TA= 25°C

TA= 70°C

P_D

Maximum Power Dissipation

100

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

357

°C

Thermal characteristics

Thermal Resistance, Junction-to-Ambient

°C/W

θJA

2006-07

12 3 4

下载PDF

与2N7002N1PT相关器件

型号	品牌	描述	获取价格	数据表
2N7002NT1	WILLAS	30 V, 154 mA, Single	获取价格
2N7002NXAK	NEXPERIA	60 V, single N-channel Trench MOSFETProduction	获取价格
2N7002NXBK	NEXPERIA	60 V, N-channel Trench MOSFETProduction	获取价格
2N7002P	NXP	60 V, 0.3 A N-channel Trench MOSFET	获取价格
2N7002P,235	NXP	60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin	获取价格
2N7002PS	NXP	320mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN	获取价格